An unusual magnetoresistance effect in the heterojunction structure of an ultrathin single-crystal Pb film on silicon substrate.

نویسندگان

  • Jian Wang
  • Xu-Cun Ma
  • Yun Qi
  • Ying-Shuang Fu
  • Shuai-Hua Ji
  • Li Lu
  • X C Xie
  • Jin-Feng Jia
  • Xi Chen
  • Qi-Kun Xue
چکیده

Superconductor films on semiconductor substrates have drawn much attention recently since the derived superconductor-based electronics have been shown to be promising for future data processing and storage technologies. By growing atomically uniform single-crystal epitaxial Pb films of several nanometers thick on Si wafers to form a sharp superconductor-semiconductor heterojunction, we have obtained an unusual magnetoresistance effect when the Pb film is superconducting. In addition to the large fundamental interest in this effect, the simple structure, and compatibility and scalability with current Si-based semiconductor technology offer a great opportunity for integrating superconducting circuits and detectors in a single chip.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Simple Photovoltaic Device Based on Multiwall Carbon Nanotube/Silicon Heterojunction

Multiwall carbon nanotubes (MWCNTs) are grown via chemical vapour deposition method directly on a stainless steel substrate. Raman spectroscopy and transmission electron microscopy are the techniques chosen to characterize the structure of the synthesized carbon nanotubes: few structural defects are detected. After their removal from the stainless steel substrate, the as-grown MWCNTs are then a...

متن کامل

Simple Photovoltaic Device Based on Multiwall Carbon Nanotube/Silicon Heterojunction

Multiwall carbon nanotubes (MWCNTs) are grown via chemical vapour deposition method directly on a stainless steel substrate. Raman spectroscopy and transmission electron microscopy are the techniques chosen to characterize the structure of the synthesized carbon nanotubes: few structural defects are detected. After their removal from the stainless steel substrate, the as-grown MWCNTs are then a...

متن کامل

Photoemission measurements of Ultrathin SiO2 film at low take-off angles

The surface and interfacial analysis of silicon oxide film on silicon substrate is particularly crucial in the nano-electronic devices. For this purpose, series of experiments have been demonstrated to grow oxide film on Si (111) substrate. Then these films have been used to study the structure of the film by using X-ray photo emission spectroscopy (XPS) technique. The obtained results indicate...

متن کامل

بررسی ورقه‌های سیلیکونی (111) و مقایسه آن با زیر لایه‌های سیلیکونی (100)

 In the last decade, Si(100) has been used as a suitable substrate in field effect transistors. Some issues such as leakage current and tunneling current through the ultrathin films have been increased with shrinking the electronic devices – particularly, field effect transistors – to nanoscale, which is threatening more use of Si(100). We have thus demonstrated a series of experiments to grow ...

متن کامل

Determination of magnetic anisotropy constants in Fe ultrathin film on vicinal Si(111) by anisotropic magnetoresistance

The epitaxial growth of ultrathin Fe film on Si(111) surface provides an excellent opportunity to investigate the contribution of magnetic anisotropy to magnetic behavior. Here, we present the anisotropic magnetoresistance (AMR) effect of Fe single crystal film on vicinal Si(111) substrate with atomically flat ultrathin p(2 × 2) iron silicide as buffer layer. Owing to the tiny misorientation fr...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Nanotechnology

دوره 19 47  شماره 

صفحات  -

تاریخ انتشار 2008